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| BSS 125 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSS 125 Type BSS 125 BSS 125 BSS 125 Pin 2 D Marking SS125 Pin 3 S VDS 600 V ID 0.1 A RDS(on) 45 Package TO-92 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 600 600 Unit V VDS V DGR RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID 14 20 A 0.1 TA = 35 C DC drain current, pulsed IDpuls 0.4 TA = 25 C Power dissipation Ptot 1 W TA = 25 C Semiconductor Group 1 12/05/1997 BSS 125 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 125 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 600 2 10 8 10 30 2.5 100 50 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.5 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS nA A nA 45 VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.1 A Semiconductor Group 2 12/05/1997 BSS 125 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.06 0.17 95 9 4 - S pF 130 14 6 ns 5 8 VDS 2 * ID * RDS(on)max, ID = 0.1 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Rise time tr 10 15 VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Turn-off delay time td(off) 16 21 VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Fall time tf 15 20 VDD = 30 V, VGS = 10 V, ID = 0.21 A RG = 50 Semiconductor Group 3 12/05/1997 BSS 125 Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max. Unit A 0.8 0.1 0.4 V 1.3 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.2 A Semiconductor Group 4 12/05/1997 BSS 125 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.11 A 1.2 W 1.0 Ptot 0.9 0.8 ID 0.09 0.08 0.07 0.7 0.06 0.6 0.05 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 0.04 0.03 0.02 0.01 0.00 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 710 V 680 V(BR)DSS 660 640 620 600 580 560 540 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 12/05/1997 BSS 125 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.24 A 0.20 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 140 Ptot = 1W k h lj i g e f d VGS [V] a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 120 a b ID 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 4 8 12 16 a b c RDS (on) 110 100 90 80 70 60 50 40 30 20 VGS [V] = 10 2.5 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 3.0 0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18 a b c d e f g h i j k d e f g h i j k l c d e g fh k ji V 24 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 0.22 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max 0.25 ID 0.18 0.16 0.14 0.12 0.10 gfs S 0.15 0.10 0.08 0.06 0.04 0.02 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 A 0.20 0.05 VGS ID Semiconductor Group 6 12/05/1997 BSS 125 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 0.1 A, VGS = 10 V 110 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 90 80 VGS(th) 3.6 3.2 70 2.8 60 50 40 30 20 10 0 -60 -20 20 60 100 C 160 98% typ 98% 2.4 2.0 typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 2% 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 0 pF C 10 2 A IF Ciss 10 -1 10 1 10 -2 Coss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997 |
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